Samsung launches next-generation AI memory technology

The world's largest memory chip manufacturer chose this year's Future of Memory and Storage (FMS) conference in Santa Clara, ​California, to introduce its V10 Bonding V-NAND, or BV-NAND, prototype. The chip features ​more than 400 layers and a new wafer-bonding architecture to increase storage ⁠density and boost performance.

As AI workloads have expanded beyond training large language models to ​the process of generating answers to user queries, demand for high-capacity NAND memory has increased. ​NAND flash memory is used to store data such as photos, videos and applications in devices including smartphones.

The company said its BV-NAND technology increases memory density by about 58% from its previous V9 NAND ​while improving read, write and input/output performance to meet growing demand from AI systems requiring ​higher-capacity and more power-efficient storage.

Samsung also showed concept models of what it described as the industry's first ‌zHBM ⁠and zNAND-O architecture, outlining its vision for next-generation 3D memory that stacks memory cells vertically to pack in more data.